金属セラミック基板
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金属セラミック基板

金属セラミック基板は、電子回路、特に薄膜技術で使用されるベース材料の一種です。これらは、アルミナ (Al2O3)、窒化アルミニウム (AlN)、または炭化ケイ素 (SiC) などのセラミック材料で作られています。セラミック基板は、優れた耐熱性および耐薬品性、高い機械的強度、優れた電気絶縁性、および高周波信号処理能力を備えています。 最新の販売、低価格、高品質のメタルセラミック基板を購入するために当社の工場に来ていただくことを歓迎します。トルボはあなたとの協力を楽しみにしています。

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製品説明

Metal Ceramic Substrates


Metal Ceramic Substrates are a type of base material used in electronic circuitry, especially in thin film technology. They are made of ceramic materials such as alumina (Al2O3), aluminum nitride (AlN), or silicon carbide (SiC). Ceramic substrates have excellent thermal and chemical resistance, high mechanical strength, superior electrical insulation, and high-frequency signals handling capacity.


In electronic circuitry, ceramic substrates provide a stable surface to mount electronic components and help in signal transmission. They are often used in applications requiring high power, such as power amplifiers, switching regulators, and voltage regulators. Ceramic substrates are also used in hybrid and integrated circuits, sensors, and other electronic devices.


Ceramic substrates have unique properties that make them useful in various industrial applications. They can withstand high-temperature, harsh environment, and chemical exposure. They are also lightweight, durable, and versatile, making them perfect for electronic packaging, automotive, aerospace, and other demanding applications.


Overall, ceramic substrates offer many advantages in electronic and industrial applications where stability, reliability, and high-performance capabilities are critical factors.

You can rest assured to buy customized Metal Ceramic Substrates from us. Torbo look forward to cooperating with you, if you want to know more, you can consult us now, we will reply to you in time!


The Torbo®Metal Ceramic Substrates

Item:Metal Ceramic Substrates

Material:Si3N4

Color:Gray

Thickness:0.25-1mm

Surface processing:Double polished

Bulk density: 3.24g/㎤

Surface roughness Ra: 0.4μm

Bending strength: (3-point method):600-1000Mpa

Modulus of elasticity:310Gpa

Fracture toughness(IF method):6.5 MPa・√m

Thermal conductivity: 25°C 15-85 W/(m・K)

Dielectric loss factor:0.4

Volume resistivity: 25°C >1014 Ω・㎝

Breakdown strength:DC >15㎸/㎜



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